1 edition 1.4 august 2004 FLM7785-8F c-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 42.8 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 32.0 and -4.4 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 3400 5200 - 3400 - -0.5 -1.5 -3.0 -5.0 - - 7.5 8.5 - -34- 39.0 39.5 - v ds = 5v, i ds = 170ma v ds = 5v, i ds = 2200ma v ds = 5v, v gs = 0v i gs = -170 a v ds =10v, i ds = 0.65 i dss (typ.), f = 7.7 ~ 8.5 ghz, z s =z l = 50 ohm f = 8.5 ghz, ? f = 10 mhz 2-tone test p out = 28.5dbm s.c.l. ma ms v db % -44 -46 - dbc dbm v g m v p v gso p 1db g 1db drain current - 2200 2600 ma i dsr im 3 add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) channel to case thermal resistance - 3.0 3.5 c/w r th 10v x i dsr x r th channel temperature rise -- 80 c ? t ch g.c.p.: gain compression point, s.c.l.: single carrier level case style: ib description the FLM7785-8F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance. features ?high output power: p 1db = 39.5dbm (typ.) ?high gain: g 1db = 8.5db (typ.) ?high pae: add = 34% (typ.) ?low im 3 = -46dbc@po = 28.5dbm ?broad band: 7.7 ~ 8.5ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed
2 FLM7785-8F c-band internally matched fet power derating curve 20 40 30 10 0 50 100 150 200 case temperature ( c) total power dissipation (w) output power & im 3 vs. input power v ds =10v f 1 = 8.5 ghz f 2 = 8.51 ghz 2-tone test 14 16 18 20 24 22 input power (s.c.l.) (dbm) s.c.l.: single carrier level 24 26 28 30 32 34 -50 -40 -30 -20 output power (s.c.l.) (dbm) im 3 p out im 3 (dbc) output power vs. frequency pin=31.5dbm 29.5dbm 27.5dbm 25.5dbm 7.9 7.7 8.1 8.3 8.5 frequency (ghz) 37 38 39 40 41 36 35 output power (dbm) v ds =10v p 1db v ds =10v f = 8.1 ghz output power vs. input power 22 24 26 28 30 32 input power (dbm) 36 38 40 42 34 32 30 30 45 15 0 output power (dbm) add p out add (%)
3 FLM7785-8F c-band internally matched fet s-parameters v ds = 10v, i ds = 2200ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 7500 .402 153.9 3.423 133.7 .094 106.1 .331 95.4 7600 .428 137.7 3.344 119.5 .091 93.1 .340 88.5 7700 .440 123.0 3.271 105.2 .090 79.1 .343 82.8 7800 .440 110.3 3.219 90.5 .089 64.6 .348 77.7 7900 .428 97.9 3.196 75.9 .088 51.4 .345 72.8 8000 .395 86.5 3.204 60.8 .087 39.0 .347 67.1 8100 .342 73.5 3.244 44.5 .088 21.9 .354 61.1 8200 .257 61.1 3.299 26.9 .091 6.3 .352 52.6 8300 .132 46.2 3.345 7.5 .093 -11.8 .331 41.7 8400 .038 -156.8 3.324 -14.4 .095 -33.4 .284 27.2 8500 .248 -171.2 3.168 -38.6 .091 -56.7 .186 0.0 8600 .462 169.6 2.817 -63.6 .083 -81.0 .069 -59.7 8700 .634 150.6 2.337 -87.2 .068 -104.4 .147 -164.2 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 0.2 0.1 scale for |s 12 | 250 25 scale for |s 21 | 1 2 3 4 7.5 ghz 7.5 ghz 7.5 ghz 7.5 ghz 8.2 8.4 8.0 8.3 8.3 8.7 8.7 8.5 8.5 8.6 7.9 7.9 7.8 7.7 7.6 8.1 8.1 8.2 8.4 8.0 8.3 8.3 8.6 8.5 8.5 8.7 8.7 7.9 7.9 7.8 7.7 7.7 7.6 8.1
4 FLM7785-8F c-band internally matched fet 2-r 1.6 0.15 (0.063) 0.6 (0.024) 10.7 (0.421) 12.0 (0.422) 17.0 0.15 (0.669) 21.0 0.15 (0.827) 12.9 0.2 (0.508) 2.0 min. (0.079) 2.0 min. (0.079) 0.2 max. (0.008) 1.45 (0.059) case style "ib" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 5.2 max. (0.205) 2.6 0.15 (0.102) 0.1 (0.004) 1 2 3 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
|
